本書以英文的形式介紹了微電子學和集成電路設計的相關技術。全書共分四部分：第一部分為半導體物理基礎知識，包括晶格結構、能帶結構、載流子濃度和輸運等；第二部分介紹半導體器件物理基礎理論，包括pn結、肖特基二極管、異質結二極管、雙極型晶體管和場效應晶體管；第三部分簡要闡述半導體集成電路的設計過程和設計方法；第四部分介紹
半導體集成電路的制造工藝。
本書可作為高等學校微電子學、集成電路設計及相關專業的“專業英語”課程的教材，也可作為從事微電子和集成電路相關科研和工程技術人員的參考書。
目 錄
Session 1 Introduction to Semiconductor
1.1 What is Semiconductor
1.2 Classification of Semiconductor
Reading Materials
Session 2 Crystal Structure
2.1 Primitive Cell and Crystal Plane
2.2 Atomic Bonding
Reading Materials
Session 3 Band Model
3.1 Introduction to Quantum Mechanics
3.2 Band
3.3 Effective Mass Theory
Reading Materials
Session 4 The Semiconductor in Equilibrium
4.1 Charge Carriers in Semiconductor
4.2 Intrinsic Semiconductor
4.3 Extrinsic Semiconductor
Reading Materials
Session 5 Carrier Transport
5.1 Overview of Carrier Transport
5.2 Low Field Transport
5.3 High Field Transport
5.4 Diffusion Current
Session 6 Nonequilibrium Excess Carriers in Semiconductor
6.1 Recombination??
6.2 Minority Carrier Lifetime
6.3 Ambipolar Transport
Reading Materials
Session 7 The pn Junction （ Ⅰ ）
7.1 Introduction
7.2 Basic Structure of the pn Junction
7.3 Energy Bands for a pn Junction
7.4 Ideal Current?Voltage Relationship
7.5 Characteristics of a Practical Diode
Reading Materials
Session 8 The pn Junction（ Ⅱ ）
8.1 Breakdown in pn Junction
8.2 Small?Signal Diffusion Resistance of the pn Junction
8.3 Junction Capacitance
8.4 Diffusion or Storage Capacitance
8.5 Diode Transients
8.6 Circuit Models for Junction Diodes
Reading Materials
Session 9 Metal?Semiconductor Contacts
9.1 Schottky Contacts
9.2 Ohmic Contacts
Reading Materials
Session 10 Heterojunctions
10.1 Strain and Stress at Heterointerfaces
10.2 Heterojunction Materials
10.3 Energy?Band Diagrams
Reading Materials.
Session 11 The Bipolar Junction Transistor （ Ⅰ ）
11.1 The Bipolar Junction Transistor Construction
11.2 Transistor Action
11.3 Nonideal Effects
11.4 Base Resistance
Reading Materials
Session 12 The Bipolar Junction Transistor ( Ⅱ )
12.1 Breakdown Voltage
12.2 Frequency Limits of BJT
12.3 The Schottky?Clamped Transistor
12.4 Small?signal Transistor Model
Reading Materials
Session 13 Basics of MOSFETs
13.1 Introduction
13.2 General Characteristics of a MOSFET
13.3 MOS System
13.4 Work Function Differences
13.5 Flat?Band Voltage
13.6 Threshold Voltage
Reading Materials
Session 14 Nonideal Effects of MOSFETs
14.1 Introduction
14.2 Effective Mobility
14.3 Velocity Saturation
14.4 Channel?length Modulation
14.5 DIBL
14.6 Hot?carrier Effect
14.7 GIDL
Reading Materials
Session 15 Advanced MOSFET Devices
15.1 Introduction
15.2 Channel Doping Profile
15.3 Gate Stack
15.4 Source/Drain Design
15.5 Schottky?Barrier Source/Drain
15.6 Raised Source/Drain
15.7 SOI
15.8 Three Dimensional Structure
Reading Materials
Session 16 Introduction to Integrated Circuits
16.1 Introduction
16.2 Size and Complexity of Integrated Circuits
16.3 Semiconductor Device for Integrated Circuits
16.4 IC Design Process
Reading Materials
Session 17 Analog Integrated Circuits Design
17.1 Introduction
17.2 Analog Signal Processing
17.3 CMOS Technology
17.4 Amplifiers
17.5 Differential Amplifiers
17.6 Operational Amplifiers
17.7 Characterization of Op Amps
Reading Materials
Session 18 Digital Integrated Circuits Design
18.1 Introduction
18.2 The Static CMOS Inverter
18.3 Designing Combinational Logic Gates in CMOS
Reading Materials
Session 19 Radio Frequency Integrated Circuits Design
19.1 Introduction
19.2 RF System Performance Metrics
19.3 RF Transceiver Architectures
19.4 RF Passive Component
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